La Mirada, CA – SSDI’s latest hermetic GaN FET device, SGR15E90M, utilizes a GaN FET in the place of a silicon MOSFET at the input stage to provide enhanced radiation tolerance. The SGR15E90M’s cascode device structure consists of a high voltage depletion mode GaN FET at the output stage and a low voltage enhancement mode GaN FET at the input stage. The GaN FET at the input stage offers a gate-source voltage of +6 to -4 V and since gallium nitride is inherently rad tolerant, it will improve radiation tolerance when compared to a silicon MOSFET.
Source: News 2021-02-15: SGR15E90M
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