CoolCAD Offers Radiation-Hardened SiC MOSFETs

Dr. Akin Akturk delves into the critical issue of radiation-induced failures of power semiconduc­tor devices utilized in space applications. He begins the discussion with an overview of NASA’s technology roadmap objectives for power and energy storage in space, underscoring areas requiring advancement. Both terrestrial and space radiation hazards are then examined, with an emphasis on modes of failure and current strategies for mitigation. Dr. Akturk further delves into technical challenges and promising outcomes revealed from testing that are influencing the direction of engineering efforts to harden semiconductor power devices against radiation. He concludes by discussing CoolCAD Electronics’ innovative silicon carbide (SiC)-based semiconductor design and fabrication approach that promises to deliver advanced radiation-hardened devices that will enable NASA’s ambitious technology roadmap objectives.

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