Silicon Carbide MOSFETs
CoolCAD power MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages (650V, 1200V, 1700V and 3300V) and current ratings. they have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC-SiO2 gate oxide dielectric layer. Doping profile, neck region, and edge termination ensure extremely low RON and high breakdown voltage.
