SiC Power MOSFET 12A - 1200V
CoolCAD
CC-TO-B15-0322
Total in Stock:
100 parts
Pricing: | |
---|---|
1 or above | $12.00 |
6 or above | $10.00 |
11 or above | $9.00 |
Gen-I MOSFET with Body Diode 12A-1200V SiC MOSFET
Features
- Higher efficiency
- Reduced cooling
- Increased power density
- Reduced system volume
- Package is TO-247-3
Maximum ratings | ||||||
Characteristics* | Symbol | Comments | Min | Typical | Max | Units |
DC blocking voltage | VDSMAX | TJ = 25°C | 1200 | V | ||
Gate input voltage range | VGS | Recommended range | -5 | 15 | V | |
Dynamic | -5 | 18 | ||||
Avalanche rating | VAVA | TJ = 25°C | 1200 | 1500 | V | |
Pulsed drain current | IDpulsed | VGS = 15V; TJ =25°C | 13 | A | ||
VGS = 15V; TJ = 175°C | 11.5 | |||||
Continuous drain current | ID | VGS = 15V; TJ = 25°C | 10 | A | ||
VGS = 15V; TJ =175°C | 8.5 | |||||
Continuous drain power | P | VGS = 15V; TJ = 25°C | 100 | W | ||
Maximum junction temperature | TJMAX | Normal operation | 175 | °C | ||
During processing/soldering | 250 | |||||
* For description only. No rights are granted. No liability us assumed for choice of products. |