SiC Power MOSFET 20A - 1200V
CoolCAD
CC-CN-23-0123
Total in Stock:
100 parts
Pricing: | |
---|---|
1 or above | $15.00 |
11 or above | $14.00 |
25 or above | $12.00 |
Gen-I MOSFET with Body Diode 20A-1200V SiC MOSFET
Features
- Higher Efficiency
- Reduced Cooling
- Increased Power
- Reduced system volume
- TO-247-3 pacakge
Maximum ratings | ||||||
Characteristics* | Symbol | Comments | Min | Typical | Max | Units |
DC blocking voltage | VDSMAX | TJ = 25°C to 175°C | 1200 | V | ||
Gate input voltage range | VGS | Recommended range | -5 | 15 | V | |
Dynamic | -5 | 18 | ||||
Avalanche rating | VAVA | VGS=0V; ID=0.1mA; TJ=25°C | 1200 | 1388 | V | |
VGS=0V; ID=0.1mA; TJ=175°C | 1200 | 1425 | ||||
Pulsed drain current | IDpulsed | VGS = 15V; TJ =25°C | 20 | A | ||
VGS = 15V; TJ = 175°C | 14 | |||||
Continuous drain current | ID | VGS = 15V; TJ = 25°C | 18 | A | ||
VGS = 15V; TJ =175°C | 12 | |||||
Continuous drain power | P | VGS = 15V; TJ = 25°C | 100 | W | ||
Maximum junction temperature | TJMAX | Normal operation | 175 | °C | ||
During processing/soldering | 250 | |||||
* For description only. No rights are granted. No liability us assumed for choice of products. |