Near Infrared LED (850 nm) 12 mil
Chips for Light
C4L-N12T5
Total in Stock:
10000 parts
This die specification contains the basic features of the 5th generation thin film dice from OSRAM. Remarkable light extraction is reached by a particular top emitting design with vertical chip structure. Furthermore the LED die shows excellent reliability and high pulse capability.
Features
- Top emitting divice
- Lambertian radiation
- optimized for SMT application
- Wavelength: 850 nm
- Polarity: n-side up
| Specs | |
|---|---|
| Color | Infrared |
| Brightness | 80 mW |
| WL/CCT | 850 nm |
| Current | 100 mA |
| Size | 310 µm |
| Lead Time | 3 Wks |
