VT06 Radiation Detection Sensor
Varadis
VT06
100nm RADFET Chip
Features
- 100nm RADFET Chip
- Ceramic DILB package
- Doses between 1 Gy(100 rad) to 10kGy(1Mrad)
- Dimensions(mm): 10.3 x 7.9 x 7.4
Varadis RADFET VT06
The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET, and this change is related to the radiation dose. The RADFET response is non-linear, and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the Varadis RADFET VT06 and measuring the DC voltage (in the range of 2.1 to 3.5 Volts).
Important Information: The VT06 RADFET has a large dynamic range, from 1 Gy (100 rad) to 10 kGy (1 Mrad). To fully understand the capabilities and limitations of this product, please review the data sheet.
