VT01 Radiation Detection Sensor
Varadis
VT01
Total in Stock:
2 parts
| Pricing: | |
|---|---|
| 1 or above | $224.40 |
400nm RADFET Chip
Features
- 400 nm RADFET
- 6L SOT-23 plastic package
- Doses between 1cGy (1 rad) and 1 kGy (100 krad)
- Dimensions (mm): 2.9 x 2.8 x 1.1
Varadis RADFET VT01
The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET, and this change is related to the radiation dose. The RADFET response is non-linear, and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the Varadis RADFET VT01 and measuring the DC voltage (in the range of 0.5 to 8 Volts).
Important Information: The VT01 RADFET has a large dynamic range, from 1 cGy (1 rad) to 1 kGy (100 krad). To fully understand the capabilities and limitations of this product, please review the data sheet.
