VT04 Radiation Detection Sensor
Varadis
VT04
1 µm 850nm RADFET Chip
Features
- Individually adjusted current source to minimize temperature influence
- Buffered analog output voltage
- TTL Logic control
- Single supply
- Low power
Varadis RADFET VT04
The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET, and this change is related to the radiation dose. The RADFET response is non-linear, and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the Varadis RADFET VT04 and measuring the DC voltage (in the range of 5 to 9 Volts).
