VT05 Radiation Detection Sensor
Varadis
VT05
Total in Stock:
1 parts
100nm RADFET Chip
Features
- 100nm RADFET chip
- Plastic SOT-23-6 package
- Doses between 1 Gy(100 rad) to 10kGy(1 Mrad)
- Dimensions (mm): 2.9 x 2.8 x 1.1
Varadis RADFET VT05
The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET, and this change is related to the radiation dose. The RADFET response is non-linear, and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the Varadis RADFET VT05 and measuring the DC voltage (in the range of 2.1 to 3.5 Volts).
Important Information: The VT05 RADFET has a large dynamic range, from 1 Gy (100 rad) to 10 kGy (1 Mrad). To fully understand the capabilities and limitations of this product, please review the data sheet.
